Infineon Technologies has introduced its latest innovation in electric mobility, the HybridPACK Drive G2 Fusion, aiming to make electric vehicles more affordable without compromising on performance or efficiency. The new power module establishes a fresh standard for traction inverters, a crucial component in e-mobility, by being the first to integrate both silicon and silicon carbide (SiC) technologies in a plug-and-play format. This cutting-edge solution strikes a balance between high performance and cost efficiency, offering manufacturers greater flexibility in optimizing inverters for electric vehicles, making them accessible to a wider market.

One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage, and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. For example, system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area.

“Our new HybridPACK Drive G2 Fusion module underlines Infineon’s innovation leadership in the automotive semiconductor industry,” said Negar Soufi-Amlashi, Senior Vice President & General Manager of High Voltage at Infineon's Automotive division. “Addressing the demand for greater e-mobility range, this technological breakthrough smartly combines silicon carbide and silicon. Integrated into a well-introduced module package footprint it offers a compelling cost-performance ratio over pure silicon carbide modules without adding system complexity for automotive system suppliers and vehicle manufacturers.”

HybridPACK Drive G2 Fusion expands Infineon's HybridPACK Drive power module portfolio and can be quickly and easily integrated into vehicle components or modules without requiring complex adjustments or configurations. The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class. It ensures high reliability over the entire temperature range from -40 °C to +175 °C and improved thermal conductivity. The unique properties of Infineon's CoolSiC technology and its silicon IGBT EDT3 technology with very fast turn-on enable the use of a single gate driver or dual gate drivers. This allows easy re-design from full silicon or full SiC-based inverters to a fusion inverter. Generally, Infineon's holistic expertise in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers as well as sensors enables premium products with cost savings at the system level. One example is the integration of Swoboda or XENSIV Hall sensors in the HybridPACK Drive package for more precise and efficient motor control.