Infineon Technologies has unveiled the CoolSiC Schottky diode 2000 V G5, marking a significant advancement in power electronics for industrial applications. This diode, the first of its kind in the market, features a breakthrough 2000 V breakdown voltage, addressing the growing demand for higher power levels and reduced power losses. Designed for DC link voltages up to 1500 VDC, the CoolSiC Schottky diode 2000 V G5 offers current ratings ranging from 10 A to 80 A. Its high voltage capability makes it especially suited for applications requiring increased DC link voltages, including solar inverters and electric vehicle (EV) charging systems.
The product family comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density. It allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.
In addition, the CoolSiC Schottky diode 2000 V G5 utilizes the XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management. Furthermore, the robustness against humidity has been demonstrated in HV-H3TRB reliability tests. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.
The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon introduced in spring 2024. The CoolSiC diodes 2000 V portfolio will be extended by offering them in the TO-247-2 package, which will be available in December 2024. A matching gate driver portfolio is also available for the CoolSiC MOSFETs 2000 V. The CoolSiC Schottky Diode 2000 V G5 family in TO-247PLUS-4 HCC is available now. An evaluation board for the product family is also available.
