BMBF Funds All-GO-HEMT Project to Develop Efficient Power Electronics

BMBF Funds All-GO-HEMT Project to Develop Efficient Power Electronics

The “All-GO-HEMT” project, spearheaded by Dr. Andreas Fiedler, aims to develop highly efficient β-(AlxGa1-x)2O3/Ga2O3 heterostructures. This project is supported with nearly 2 million euros in funding by the German Federal Ministry of Education and Research (BMBF). This initiative is expected to significantly enhance efficiency in power electronics, contributing to sustainable energy generation efforts.

Gallium oxide (Ga2O3), with its ultra-wide band gap, is the primary material being utilized, offering the potential for more compact designs and improved reliability compared to traditional materials like silicon, gallium nitride, and silicon carbide. However, Ga2Ohas been limited in charge carrier mobility, which the project seeks to address through innovative aluminum-alloyed heterostructures.

Dr. Fiedler describes Ga2O3's performance by comparing it to the difference between dirt roads and highways: though slower at times, the compact design of Ga2O3 can improve efficiency. The project aims to create a high-quality material base to facilitate the development of advanced power electronic devices, which are currently hindered by inadequate supply of quality materials.

The Ferdinand-Braun Institut (FBH) is involved in developing prototypes that will be tested for industrial application by ZF Friedrichshafen AG. Additionally, the broader value chain, from crystal growth to device completion, will be assessed by industrial partners AIXTRON SE and Siltronic AG to evaluate the economic and ecological advantages of the technology.

As part of the “BMBF NanoMatFutur” competition for young researchers, the project aims to foster sustainable research opportunities and support innovative talent in the field. Dr. Fiedler plans to establish an independent junior research group at the IKZ, supported by a postdoctoral researcher and two doctoral students.

Semiconductor-based power electronics are vital for addressing climate change and optimizing energy use in transitioning to renewable energy sources. According to AG Energiebilanzen e.V., approximately 65% of Germany's energy generated in 2021 was lost through inefficient conversion processes, highlighting the urgent need for improved solutions.

The “All-GO-HEMT” project represents a critical step toward achieving technological sovereignty in Germany’s semiconductor industry and increasing economic efficiency in energy-intensive applications, while also contributing to sustainability goals.