Innoscience has enhanced its portfolio with two new 100 V automotive-grade GaN devices. The INN100W135A-Q (R_DS(on), _max = 13.5 milli-ohms) and the more compact INN100W800A-Q (R_DS(on),max = 80 milli-ohms) are both AEC-Q101 approved and optimized for LiDAR, high power density DC-DC converters, and Class D audio applications within the automotive industry.

The INN100W135A-Q and the ultra-compact INN100W800A-Q, using WLCSP packages of 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, provide substantial size and power efficiency benefits. Both devices are meticulously designed to meet the demands of L2+/L3 assisted driving systems, with switching rates up to 13 times faster and pulse widths diminished to one-fifth of those of silicon alternatives. The parameters Q_g and Q_oss exhibit enhancements of 1.5 to 3 times compared to their silicon equivalents. This yields medium to long-range identification capabilities of 200 to 300 meters, crucial for enhanced driver assistance and autonomous driving applications.

Innoscience states that these devices are engineered to satisfy the increasing demand for efficiency and precision in driver assistance and autonomous driving technologies. Due to their enhanced performance, GaN devices swiftly supplant conventional silicon in essential automotive applications. In LiDAR applications, GaN is recognized for facilitating superior resolution and extended detection ranges while minimizing power loss and thermal increase compared to conventional silicon technology.

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