EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers