STMicroelectronics has introduced the STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches. They combine ST’s latest robust galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.
Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.
The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under-Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.
The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive over-voltage spikes. The under-voltage-lockout protection prevents turn-on with insufficient drive voltage.
The driver’s integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross-conduction.
The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO, and over-temperature protection are notified with two dedicated open drain diagnostic pins.
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