Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, and IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport, and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN 650 V GaN ICs in a multi-level, 800 V_DC inverter. The demo delivers super-high power density – 30 kW/l - greater than can be achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 milli-ohm / 650V ICeGaN ICs - 36 devices in total - in parallel.

“We are super excited at this first result of our partnership with IFPEN. 800 V_DC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment – sustainability.” comments Andrea Briconni, Chief Marketing Officer, CGD.

These multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V_dc; 3-phase output; a peak current of 125 A_rms (10 s) (180 A_pk); and a continuous current of 85 A_rms continuous (120 A_pk).

The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits: 

• Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained;
• Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances;
• Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system;
• Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices;
• Modular design: this facilitates scalability and adaptability for varying system requirements.

“Following the implementation of this inverter reference using CGD’s enabling ICeGaN ICs coupled with innovative topologies, such as multi-level solutions, IFPEN now strongly believes that GaN is a breakthrough technology in terms of performance and cost for high-voltage traction inverters,” comments Gaetano De Paola, Program Manager, IFPEN.

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