MOSFETs are pivotal semiconductor devices known for their high switching speeds and efficient power handling. Their continuous evolution focuses on reducing losses and improving performance in modern circuits. MOSFETs find widespread use in power conversion, motor control, and high-speed switching circuits. Their versatility makes them essential in industries such as automotive, telecommunications, and consumer electronics. In this article, everything PE has listed some interesting MOSFETs that were trending on the website in 2024.
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250 V N-Channel MOSFET for Power Factor Correction Applications
The MDD7N25RH from Magnachip Semiconductor is an N-Channel MOSFET that is ideal for switched mode power supplies (SMPS), high-intensity discharge lamps (HID), LED TV, power factor correction (PFC), and general-purpose applications. This MOSFET has a drain-source breakdown voltage of over 250 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 0.55 ohms. This RoHS-compliant power MOSFET is available in a surface mount package that measures 10.41 x 6.73 x 2.39 mm. Read more.
1200 V SiC MOSFET for Automotive Applications
The 5SFG 0980B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for all e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of up to 2.4 V. It has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of 1.9 mΩ. It is available as a molded chip that measures 110 x 69 x 17.35 mm and is ideal for main drive train in xEVs, e-trucks, e-buses, traction auxiliary converters, and power electronics for xEV-charging applications. Read more.
30 V N-Channel Enhancement MOSFET for Industrial Applications
The ES3400 from Hunan Jingxin Microelectronics is an N-Channel Enhancement Mode Power MOSFET that is ideal for DC/DC conversion, power management in portable/desktop PCs, load switches, and PWM applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of 21 milli-ohms. It is available in a surface-mount package that measures 2.8 x 2.25 mm. Read more.
600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
The STH60N099DM9-2AG from STMicroelectronics is an Automotive-Qualified N-Channel Enhancement Mode Power MOSFET that is ideal for high-efficiency switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 99 milli-ohms. This avalanche-tested power MOSFET is available in a surface-mount package that measures 16.90 x 12.20 mm. Read more.
80 V Automotive Qualified Power MOSFET
The IAUCN08S7N013 from Infineon Technologies is an Automotive Qualified Power MOSFET ideal for general automotive applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 1.30 milli-ohms. This RoHS-compliant MOSFET is available in a surface-mount package that measures 5.15 x 5.48 mm. Read more.
1200 V SiC Power MOSFET
The S2M0025120K from SMC Diode Solutions is a SiC Power MOSFET that has been designed for energy-sensitive, high-frequency applications in challenging environments. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 25 milli-ohms. It is available in a through-hole package that measures 39.71 x 15.5 x 4.8 mm and is ideal for EV fast charging modules, EV on-board chargers, solar inverters, online UPS/industrial UPS, switch mode power supplies (SMPS), DC-DC converters, and energy storage systems (ESS) applications. Read more.
100 V N-Channel Enhancement Mode Power MOSFET
The AONA66916 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode Power MOSFET that is ideal for telecom, solar, and DC-DC applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 3.4 milli-ohms. This RoHS-Compliant MOSFET is provided with top-side cooling for improved thermal performance, making it suitable for power supply applications. It is available in a surface-mount package that measures 5 x 6 mm. Read more.
1700 V N-Channel Enhancement Mode MOSFET
The MG250V2YMS3 from Toshiba is an N-Channel Enhancement mode MOSFET. It has a drain-source breakdown voltage of 1700 V and a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of up to 250 A and a power dissipation of less than 1350 W. It is available as a module that measures 152 x 62 mm and is ideal for high-power switching and motor controller applications. Read more.
100 V Hermetically-Sealed N-Channel Enhancement Power MOSFET
The IRF150 from TT Electronics is an N-Channel Enhancement Power MOSFET. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of less than 55 milli-ohms. This MOSFET has a continuous drain current of up to 38 A and a power dissipation of less than 150 W.This MOSFET is available in a through-hole package that measures 39.95 x 19.94 mm. Read more.
1700 V Half-Bridge SiC Power MOSFET for Medical Applications
The CAB320M17XM3 from Wolfspeed is a Half-Bridge SiC Power MOSFET that is ideal for energy, medical, motor, and motion control, test and production equipment, transportation, and traction inverter applications. It has a drain-source breakdown voltage of over 1700 V, a drain-source voltage of up to 1700 V, and a drain-source on-resistance of 4.6 milli-ohms. This power module encompasses a dedicated high-side Kelvin-drain pin for direct voltage sensing, which offers over-current protection. It is available in a module that measures 80 x 53 mm. Read more.
-100 V P-Channel Enhancement Mode Power MOSFET
The MTE040P10RV8-0-T6-G from Cystech Electronics is a P-Channel Enhancement Mode Power MOSFET that is ideal for industrial and commercial applications. It has a drain-source breakdown voltage of over -100 V, a gate threshold voltage of -4 V, and a drain-source on-resistance of 62 milli-ohms. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 3.45 x 3.45 mm. Read more.
80 V Symmetric Dual N-Channel MOSFET
The SiZF4800LDT-T1-GE3 from Vishay is a Symmetric Dual N-Channel MOSFET. It has a drain-source breakdown voltage of 80 V, a gate threshold voltage of 2 V, and a drain-source on-resistance of less than 19 milli-ohms. This RoHS-compliant power MOSFET incorporates flip-chip technology for optimal thermal design. It is available in a surface-mount package that measures 3.3 x 3.3 mm and is ideal for synchronous buck, half-bridge, POL, and telecom DC-DC conversion applications. Read more.
100 V Dual N-Channel Power MOSFET for Switching Applications
The HP8KE6TB1 from ROHM Semiconductor is a Dual N-Channel Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of 100 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 73 milli-ohms. This RoHS-compliant MOSFET offers low on-resistance in a small package. It is available in a surface-mount package that measures 5.8 x 5 x 1.1 mm. Read more.
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Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of MOSFETs we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.
