
Diotec Semiconductor has unveiled the DIF075F065, a fast-switching insulated-gate bipolar transistor (IGBT) with a reverse diode, designed to meet the demands of commercial and industrial applications. This IGBT based on Trench Gate and Fieldstop Technology, operates at switching frequencies between 80–100 kHz.
Key features of DIF075F065
- Fast switching speed
- Kelvin source for fast switching and reduced noise level at the gate
- Low collector-emitter saturation voltage
- Parallel operation possible
- Short circuit proof
- Compliant to RoHS and REACH standards
Maximum Ratings
Collector-Emitter Voltage | VCES | 650 V |
Gate-Emitter Voltage Continuous | VGES | +/- 20V |
Power Dissipation | Ptot | 385 W |
Collector Current Continuous | IC | 100 A 75 A |
Peak Collector Current | ICM | 300 A |
Diode Current Continuous | IF | 100 A 75 A
|
Peak Diode Current | IFM | 300A |
Key applications of DIF075F065
- Frequency Inverters
- AC and DC motor drives
- Suitable for a wide range of commercial and industrial applications.
Click here to learn more about DIF075F065