Infineon Technologies unveils Radiation Tolerant Power MOSFET, the BUP06CN035L-01 suited for power-related applications. This newly launched power MOSFET is a 60 V, 52 A, N-channel MOSFET available in a surface-mount PG-TO263 package. It can withstand transient events caused by ionizing particles and is approved for a Total Ionizing Dose (TID) Tolerance of 30 kRad. It is developed to operate effectively in environments exposed to high levels of radiation for optimized LEO missions and constellations. This MOSFET includes characteristics suited for high-power switching and is capable of controlling a substantial drain current. This RoHS-compliant, Pb-free power MOSFET is qualified according to the AEC-Q101 standard.
Key features of BUP06CN035L
- Possess low RDS(on)
- Offers Single Event Effect (SEE) tolerance
- Total Ionisation Dose (TID) tolerant 30 kRad approved
- N-channel MOSFET
Key applications of BUP06CN035L
- Ideally suited for all power-related applications including:
- Power conditioning unit
- Power distribution unit
- DC-DC converters
Click here to learn more about BUP06CN035L-01
