GaNPower International has unveiled the GPI65005, a GaN Power High Electron Mobility Transistor (HEMT) in the DFN 5X6 package. These devices are N-channel 650 V Power GaN HEMTs based on proprietary E-mode GaN on silicon technology. The resulting product has extremely low on-state resistance, very low input capacitance and zero reverse recovery charge making it especially suitable for applications that require superior power density, ultra-high switching frequency and outstanding efficiency.
Key Features of GPI65005DF
- Ultra-low RDS(on)
- High dv/dt capability
- Extremely low input capacitance
- Zero Qrr
- Outstanding switching performance
- Low Profile
Key Applications of GPI65005DF
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