Gallium Nitride (GaN) transistors are advanced wide bandgap (WBG) semiconductors that offer higher efficiency, faster switching speeds, and lower losses compared to traditional silicon devices. With a wide bandgap of 3.4 eV, GaN enables operation at higher voltages, frequencies, and temperatures, allowing for compact, high-power density designs. These features make GaN transistors ideal for applications like electric vehicles, renewable energy systems, wireless charging, and 5G telecommunications. In this article, everything PE has listed some interesting GaN Transistors that were trending on the website in 2024.
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100 V Enhancement-Mode GaN Power Transistor
The EPC2361 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for synchronous rectification, DC-DC conversion, motor drives, and solar MPPT applications. It has a drain-to-source voltage of over 100 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 1 milli-ohm. It is available in a surface mount package that measures 3 x 5 mm. Read more.
50 V Enhancement Mode GaN-on-Si Power Transistor
The INN150LA070A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor. The transistor has a drain-source breakdown voltage of 150 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 7 milli-ohms. It is available in a surface-mount package that measures 3.2 x 2.2 mm and is ideal for synchronous rectification, class-D audio, high-frequency DC-DC converter, communication base station, and motor driver applications. Read more.
300 V Radiation Hard eGaN Power Transistor
The EPC7030G from EPC Space is a Radiation Hard eGaN Power Transistor that is ideal for commercial and industrial applications. This transistor has a drain-source voltage of over 300 V, a gate threshold voltage of 1.4 V, and a drain-source on-resistance of less than 32 milli-ohms. This MIL-STD-750-compliant power transistor is available in a surface-mount package. Read more.
650 V Direct Drive D-Mode Power Switch for Power Supply Applications
The V08TC065S1X11 from VisIC Technologies is a Direct Drive D-Mode Power Switch that has been designed for applications requiring high power and efficiency with low volume and cost. It has a drain-source voltage of 650 V, a gate-source voltage of over -25 V, and a drain-source on-resistance of 8 milli-ohms. It is available in a surface-mount package that measures 21 x 23 x 3 mm and is ideal for solar inverters, AC-DC power supplies, AC motors, laser drivers, battery chargers, and automotive applications. It is available in a surface-mount package that measures 21 x 23 x 3 mm and is ideal for solar inverters, AC-DC power supplies, AC motors, laser drivers, battery chargers, and automotive applications. Read more.
650 V Enhancement Mode GaN Power Transistor for Datacom Applications
The GAN140-650EBEZ from Nexperia is an Enhancement Mode GaN Power Transistor that is ideal for high power density and high-efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, fast battery charging, mobile phones, laptop, tablet and USB type-C chargers, datacom and telecom (AC-to-DC and DC-to-DC) converters, motor drives, solar (PV) inverters, Class D audio amplifiers, TV PSU and LED driver applications. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.7 V, and a drain-source on-resistance of 140 milli-ohms. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 8 x 8 mm. Read more.
650 V Enhancement Mode GaN-on-Silicon Power Transistor
The TDG650E601TSP from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for battery management, traction drives, dc-dc converters, space motor drives, and bridgeless totem pole PFC applications. This GaN transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 25 milli-ohms. It is available in a PCB-mount package that measures 9.00 x 7.64 mm. Read more.
600 V Enhancement Mode GaN Power Transistor for SMPS Application
The IGLR60R260D1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor. This transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.6 V, and a drain-source on-resistance of 370 milli-ohms. It is available in a surface-mount package that measures 6 x 5 x 1.1 mm and is ideal for industrial and consumer SMPS (based on the half-bridge topology) applications. Read more.
1200 V N-channel GaN Power Transistor for Power Adapter Applications
The GPI120R12T74IC from GaNPower International is an N-channel GaN Power Transistor ideal for switching power, power adapters, and power delivery charger applications. This GaN transistor has a drain-source voltage of up to 1200 V and a drain-source on-resistance of less than 18 milli-ohms. This transistor is available in a through-hole package that measures 15.70 x 40.64 mm. Read more.
Enhancement Mode GaN Power Transistor for PV inverter Applications
The CGD65C025SP2 from Cambridge GaN Devices is an Enhancement Mode GaN Power Transistor that is ideal for industrial, datacentre and telecom SMPS, industrial motor drives, PV inverters, uninterruptible power supplies, and energy storage systems applications. This transistor has a drain-source voltage of up to 650 V, a gate-source voltage from -1 V to +20 V, and a drain-source on-resistance of 25 milli-ohms. This normally off-power GaN power transistor is available in a surface-mount package that measures 10 x 10 mm. Read more.
650 V GaN Field Effect Transistor for Datacom Applications
The TP65H070G4RS-TR from Transphorm is a GaN Field Effect Transistor that is ideal for datacom, broad industrial, PV inverter, servo motor, and computing applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 85 milli-ohms. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 9.26 x 10 mm. Read more.
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Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of GaN Transistors we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.
