Tower Semiconductor, a leading foundry of high-value analog semiconductor solutions, announced its new 300mm 65nm 3.3V-based BCD (Bipolar-CMOS-DMOS) Power management platform, PML, in addition to its successful 5 V-based offerings already in high-volume production in Japan and that which is being qualified in Albuquerque, New Mexico, USA, manufacturing site. This new, cutting-edge platform addresses the stringent low-voltage requirements of mobile devices and meets the growing demands for high power efficiency and power density in AI and data center applications.
The advanced 300mm BCD PML offering comprises LDMOS devices with ultra-low on-resistance and best-in-class figure-of-merit, achieving the highest power conversion efficiency for fast switching converters. In addition, it features power devices with a wide voltage range and a nominal 3.3 V gate voltage that can be substantially overdriven and underdriven addressing products such as PMIC, Audio IC, and high-power voltage regulators for GPU and CPU. These advantages enable users to achieve outstanding performance in power consumption and extend battery life in battery-operated applications.
“Our new PML platform exemplifies Tower Semiconductor’s continuous success in providing cutting-edge power management technology solutions,” said Shimon Greenberg, General Manager of the Power Management Business Unit. “Specifically designed for advanced power management applications, this innovation empowers our customers to develop industry-leading products with a competitive edge that address the evolving demands of the strategic mobile, AI, and data center markets”.
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