ROHM Semiconductor introduces the SCS320AG, a 650 V Silicon Carbide (SiC) Schottky Barrier Diode designed for high-performance and energy-efficient applications. This diode offers improved switching performance, reduced thermal dependence, and high surge current capabilities, making it ideal for advanced power systems.
Key Features of SCS320AG
- Short Recovery Time: Ensures faster switching and reduced energy loss during transitions.
- Reduced Temperature Dependence: Delivers stable performance across a wide temperature range, enhancing reliability.
- High Surge Current Capability: Withstands high inrush currents, improving robustness in demanding scenarios.
- High-Speed Switching: Optimized for faster operation in high-frequency applications.
Specifications
- Reverse Voltage (VR): 650 V
- Continuous Forward Current (IF): 20 A
- Surge Forward Current (IFSM): 123 A (10ms square wave at 25°C)
- Repetitive Peak Forward Current (IFRM): 81A (10ms sinusoidal wave at 150°C)
- Total Power Dissipation (PD): 450W
- Junction Temperature (Tvj): -55°C to +175°C
Electrical Characteristics
- Charge (QC): 47nC, supporting high-speed switching with reduced energy losses.
- Packaging: Available in TO-220ACGE package, ensuring efficient heat dissipation and compact installation.
- Construction: Silicon carbide epitaxial planar type for superior performance.
Applications
Click here to learn more about SCS320AG.
