EPC Space introduces Radiation-Hardened GaN HEMT, the JANSH2N7667UFBC. This eGaN power-switching HEMT (High Electron Mobility Transistor) has been specifically designed for critical applications, space, and other high-reliability environments. This GaN HEMT has exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for a very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact packaging. It consists of a source sense pin to eliminate unwanted drain (load) current and gate (drive) current interactions. This GaN HEMT is both LDR(Low Dose Rate) and HDR(High Dose Rate) Total Ionizing Dose immune. It offers SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. This HEMT is available in a surface-mount package.
Key applications of JANSH2N7667UFBC
- Satellite and Avionics
- Deep Space Probes
- High-Speed Rad-Hard DC-DC Conversion
- Rad-Hard Motor Controllers
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