Infineon Technologies unveils its latest innovation in GaN Transistor, the IGI60L1111B1M. This newly launched GaN transistor combines a half-bridge power stage consisting of two CoolGaN Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6 x 8 mm TFLGA-27 package. IGI60L1111B1M can operate over a wide VDD range (10 to 24 V) and offers compatibility with PWM inputs. It has zero reverse-recovery charge and includes turn-ON & OFF dv/dt slew rate control for mitigating cross-conduction.
Key benefits of IGI60L1111B1M
Compared to a discrete solution:
- 4x reduction in component count
- 2x reduction of footprint on a PCB
On a system level:
- Reduced cost
- Reduced weight
- Reduced complexity
Key applications of IGI60L1111B1M
- Adapters and chargers
- Mixer - variable speed DC and SRM motors
Click here to learn more about Infineon's GaN Transistors listed on everything PE.
