Wise-integration unveils the WI62195, its latest innovation in Half-Bridge Power GaN transistors. The WI62195 is a 650 V enhancement mode GaN-on-silicon half-bridge power circuit of the WiseGan power integrated circuits family of Wise-integration. The properties of GaN allow high current, high voltage breakdown, and high switching frequency. It is designed with a bottom-side cooled configuration and has easy gate drive requirements (0 V to 6 V). This power GaN IC has a drain-source resistance of 195 mΩ per switch and a maximum drain current of 9 A. It features zero reverse recovery loss and can tolerate switching frequencies above 1 MHz. This GaN IC is available in a low-inductance PDFN package with a 6 x 8 mm PCB footprint.
Key applications of WI62195
- High-efficiency power conversion
- High-density power conversion
- AC-DC, DC-DC, DC-AC converters
- Bridgeless Totem Pole PFC
- ACF (active clamp flyback)
- LLC resonant converter
- Half-bridge topologies
- Synchronous Buck or Boost
- Small-Medium UPS
- Fast Battery Charging
Click here to learn more about GaN Transistors from Wise-integration.
