MCC Semi has introduced its first high-voltage MOSFET with Kelvin source pin in a compact DFN8080A package. Designed to help engineers balance costs and performance, the 600 V MSJL120N60FH leverages super-junction technology and an integrated FRED body diode to facilitate high-speed switching and recovery.
The low gate charge and drain-source on-resistance (RDS(on)) of only 100 Ω (typ.) significantly improve switching speeds and reduce losses in a range of demanding applications. Featuring junction-to-case thermal resistance of 0.47 K/W, this MOSFET assures reliable operation in high-temp environments, making it an intelligent choice for motor drives, solar inverters, industrial controllers, and power supplies.
With a height of less than 1 mm, its low-profile DFN8080A package is well-suited for high-frequency applications where space is limited, and performance is mission-critical.
For engineers looking to boost efficiency and minimize losses, MSJL120N60FH boasts the perfect combination of features for high-voltage, space-constrained scenarios.
Key Features and Benefits
- Superjunction technology: Enhances efficiency by reducing on-state resistance.
- Low on-resistance: Minimizes power dissipation at 100mΩ (typ.).
- Low conduction losses: Improves overall system efficiency.
- Low gate charge: Facilitates increased switching speeds.
- Kelvin source pin: Dramatically reduces switching losses while enhancing efficiency.
- Excellent thermal resistance: Junction-to-case thermal resistance of 0.47K/W ensures stable operation amid demanding conditions.
- Integrated FRED body diode: Reduces reverse recovery time for improved switching.
- High-speed switching: Optimal for high-frequency applications.
- Compact package size: DFN8080A package with a low-profile height of less than 1mm, perfect for space-constrained designs.
Key Applications
- Power supply and conversion
- Motor control
- Renewable energy
- Industrial automation
Click here to learn more about MSJL120N60FH.
