Qorvo Introduces 750 V SiC Junction Field Effect Transistor

Qorvo Introduces 750 V SiC Junction Field Effect Transistor

Qorvo has introduced its latest SiC Junction Field Effect Transistor (JFET), the UJ4N075004L8S, a high-performance Gen 4 device designed to meet demanding power applications. Featuring a voltage rating of 750 V and an ultra-low on-resistance of 4.3 milli-ohms, this normally-on SiC JFET offers exceptional efficiency in a compact TOLL package. It is an ideal fit to address the challenging thermal and space constraints of solid-state circuit breakers and relay applications. It has a robust device technology capable of the high-energy switching required in circuit protection applications. This short circuit-rated JFET transistor has a high pulse current capability and an attached silver-sintered die for excellent thermal resistance. It can operate up to 175°C and provides reliable performance in critical applications.

Key applications of the UJ4N075004L8S

Click here to learn more about UJ4N075004L8S.

Qorvo

  • Country: United States
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