MCC expands its power MOSFET portfolio with the introduction of the new MCTL2D1N10YH. The MCTL2D1N10YH features Split Gate Trench MOSFET technology to improve efficiency while reducing conduction and switching losses. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 2.1 milli-ohms. This MOSFET operates over a wide temperature range of -55°C to +175°C and has a power dissipation of 375 W. It is available in a surface-mount, TOLL-8L package and is lead-free, halogen-free, and RoHS-compliant.
Key features of the MCTL2D1N10YH
- Excellent Package For Heat Dissipation
- Moisture Sensitivity Level 1
- Epoxy Meets UL 94 V-0 Flammability Rating
Key technical ratings of the MCTL2D1N10YH
- Storage Temperature Range: -55°C to +175°C
- Thermal Resistance: 45°C/W Junction to Ambient (Note 2)
- Thermal Resistance: 0.5°C/W Junction to Case
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