ROHM Semiconductor has introduced the BM3G115MUV-LB, a 650 V GaN HEMT Power Stage IC, designed for industrial equipment applications. This high-performance IC is ranked as a top-tier solution in the industrial market, offering enhanced efficiency and reliability for demanding power applications.
By integrating the 650 V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate of up to 150 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost and PCB size. This IC is designed to adapt major existing controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Key features of BM3G115MUV-LB
- Nano Cap Integrated 5 V LDO
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Click here to learn more about BM3G115MUV-LB.
