Toshiba Launches 600 V N-Channel Super-Junction Power MOSFET

Toshiba Launches 600 V N-Channel Super-Junction Power MOSFET

Toshiba has launched an N-channel power MOSFET, the TK024N60Z1, which utilizes the DTMOSVI 600V series process with a super junction structure.

In recent years, the demand for low on-resistance products has increased to enhance the efficiency of power supply circuits. This product has been developed to meet that need. TK024N60Z1 achieves a drain-source on-resistance of 0.024 ohms (max), making it the lowest on-resistance in the DTMOSVI 600V series and reducing conduction loss. This improves the efficiency of power supplies and reduces heat generation. Additionally, the package adopts TO-247 with versatile and high heat dissipation.

By optimizing the gate design and process, the DTMOSVI 600V series, which includes the new product, has reduced the value of drain-source on-resistance per unit area by approximately 13% and drain-source on-resistance×gate-drain charge-the figure of merit for MOSFET performance-by approximately 52% compared to Toshiba’s conventional generation DTMOSIV-H series products with the same drain-source voltage rating. In addition, Toshiba offers tools that support circuit design for switched-mode power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.

Key Features of TK024N60Z1 

1. The smallest On-resistance (0.024 ohms (max) (VGS=10 V)) in the DTMOSVI series 

TK024N60Z1 achieves the lowest On-resistance (0.024 ohms (max) (VGS=10 V)) in the DTMOSVI series, minimizing conduction loss and helping to improve the efficiency of the power supply.

2. Low RDS(ON)×Qgd (drain-source on-resistance×gate-drain charges) and High efficiency of switched-mode power supplies

By optimizing the gate design and process, DTMOSVI 600V series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, and drain-source on-resistance×gate-drain charge -the figure of merit for MOSFET performance- by approximately 52% compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This means the DTMOSVI series has a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.

Applications 

  • Switched-mode power supplies (data center servers, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power supply

Toshiba will continue to expand the DTMOSVI series lineup and support energy conservation by reducing power loss in switched-mode power supplies.

Click here to learn more about  TK024N60Z1.