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2SB1132Q

Bipolar Junction Transistor by AiT Semiconductor (87 more products)
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2SB1132Q Image

The 2SB1132Q from AiT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 0.5 µA, Collector Base Voltage 40 V, Collector Cut off Current 0.5 µA, Collector Emitter Breakdown Voltage 32 V. Tags: Surface Mount, PNP Transistor. More details for 2SB1132Q can be seen below.

Product Specifications

Product Details

  • Part Number
    2SB1132Q
  • Manufacturer
    AiT Semiconductor
  • Description
    32 V, 1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    0.5 µA
  • Collector Base Voltage
    40 V
  • Collector Cut off Current
    0.5 µA
  • Collector Emitter Breakdown Voltage
    32 V
  • Collector Emitter Voltage
    32 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    2 A
  • DC Current Gain
    120 to 270
  • Gain Bandwidth Product
    150 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.5 W
  • Output Capacitance
    30 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89

Technical Documents
View details on the manufacturer's website
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