CP710V-CJD350-CT

Bipolar Junction Transistor by Central Semiconductor (585 more products)

Note : Your request will be directed to Central Semiconductor.

The CP710V-CJD350-CT from Central Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 3 V, Emitter Cut off Current 100 µA, Collector Base Voltage 300 V, Collector Cut off Current 100 µA, Collector Emitter Breakdown Voltage 300 V. Tags: Bare Die, PNP Transistor. More details for CP710V-CJD350-CT can be seen below.

Product Specifications

Product Details

  • Part Number
    CP710V-CJD350-CT
  • Manufacturer
    Central Semiconductor
  • Description
    300 V, 0.5 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    3 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    300 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    300 V
  • Collector Emitter Voltage
    300 V
  • Continuous Collector Current
    0.5 A
  • Pulse Collector Current
    750 mA
  • DC Current Gain
    30 to 240
  • Gain Bandwidth Product
    10 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    15 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Bare Die
  • Dimension
    26 x 26 MILS

Technical Documents

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