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2N2905A

Bipolar Junction Transistor by Comset Semiconductors (294 more products)
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2N2905A Image

The 2N2905A from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage -2.6 to -1.3 V, Collector Base Voltage -60 V, Collector Cut off Current -20 µA, Collector Emitter Breakdown Voltage -60 V. Tags: Through Hole, PNP Transistor. More details for 2N2905A can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2905A
  • Manufacturer
    Comset Semiconductors
  • Description
    -60 V, -0.6 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -2.6 to -1.3 V
  • Collector Base Voltage
    -60 V
  • Collector Cut off Current
    -20 µA
  • Collector Emitter Breakdown Voltage
    -60 V
  • Collector Emitter Voltage
    -60 V
  • Continuous Collector Current
    -0.6 A
  • DC Current Gain
    50 to 300
  • Gain Bandwidth Product
    200 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.6 to 3 W
  • Output Capacitance
    8 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Application
    High speed switching and general purpose applications

Technical Documents
View details on the manufacturer's website
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