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BCY58VII

Bipolar Junction Transistor by Comset Semiconductors (294 more products)
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BCY58VII Image

The BCY58VII from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 0.6 to 1.2 V, Emitter Cut off Current 10 nA, Collector Cut off Current 10 µA, Collector Emitter Breakdown Voltage 32 V. Tags: Through Hole, NPN Transistor. More details for BCY58VII can be seen below.

Product Specifications

Product Details

  • Part Number
    BCY58VII
  • Manufacturer
    Comset Semiconductors
  • Description
    32 V, 0.2 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    0.6 to 1.2 V
  • Emitter Cut off Current
    10 nA
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    32 V
  • Collector Emitter Voltage
    32 V
  • Continuous Collector Current
    0.2 A
  • DC Current Gain
    20 to 220
  • Gain Bandwidth Product
    150 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1 W
  • Output Capacitance
    5 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-18

Technical Documents
View details on the manufacturer's website
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