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BD652

Bipolar Junction Transistor by Comset Semiconductors (294 more products)
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The BD652 from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 3 V, Emitter Cut off Current 5 mA, Collector Base Voltage 120 V, Collector Cut off Current 1 mA. Tags: Through Hole, PNP Transistor. More details for BD652 can be seen below.

Product Specifications

Product Details

  • Part Number
    BD652
  • Manufacturer
    Comset Semiconductors
  • Description
    120 V, 8 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    3 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    1 mA
  • Collector Emitter Voltage
    120 V
  • Continuous Collector Current
    8 A
  • Pulse Collector Current
    12 A
  • DC Current Gain
    200 to 2700
  • Industry
    Industrial, Commercial
  • Power Dissipation
    62.5 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Application
    Audio equipment, General amplifiers, Analogue switching application
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website
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