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BD681

Bipolar Junction Transistor by Comset Semiconductors (294 more products)
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BD681 Image

The BD681 from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 5 mA, Collector Base Voltage 100 V, Collector Cut off Current 2 mA, Collector Emitter Voltage 100 V. Tags: Through Hole, NPN Transistor. More details for BD681 can be seen below.

Product Specifications

Product Details

  • Part Number
    BD681
  • Manufacturer
    Comset Semiconductors
  • Description
    100 V, 4 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    2 mA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    4 A
  • Pulse Collector Current
    6 A
  • DC Current Gain
    750 to 2200
  • Industry
    Industrial, Commercial
  • Power Dissipation
    40 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-126
  • Application
    Audio and video applications
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website
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