BTC1510E3-KA-UB-G

Bipolar Junction Transistor by Cystech Electronics (273 more products)

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BTC1510E3-KA-UB-G Image

The BTC1510E3-KA-UB-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 2 V, Emitter Cut off Current 2 mA, Collector Base Voltage 150 V, Collector Cut off Current 200 µA. Tags: Through Hole, NPN Transistor. More details for BTC1510E3-KA-UB-G can be seen below.

Product Specifications

Product Details

  • Part Number
    BTC1510E3-KA-UB-G
  • Manufacturer
    Cystech Electronics
  • Description
    150 V, 10 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    2 V
  • Emitter Cut off Current
    2 mA
  • Collector Base Voltage
    150 V
  • Collector Cut off Current
    200 µA
  • Collector Emitter Breakdown Voltage
    150 V
  • Collector Emitter Voltage
    150 V
  • Continuous Collector Current
    10 A
  • Pulse Collector Current
    15 A
  • DC Current Gain
    100 to 20000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    65 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Configuration :- Dual, Darlington transistor, Collector-Emitter saturation voltage :- 1.1 V

Technical Documents

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