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BTD5213L3-0-T3-G

Bipolar Junction Transistor by Cystech Electronics (273 more products)
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BTD5213L3-0-T3-G Image

The BTD5213L3-0-T3-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 1.2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 180 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for BTD5213L3-0-T3-G can be seen below.

Product Specifications

Product Details

  • Part Number
    BTD5213L3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    1.5 A
  • DC Current Gain
    60 to 400
  • Gain Bandwidth Product
    125 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    2 W
  • Output Capacitance
    10 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Application
    General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage.

Technical Documents
View details on the manufacturer's website
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