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ISB1035AS1E

Bipolar Junction Transistor by Isahaya Electronics (265 more products)
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ISB1035AS1E Image

The ISB1035AS1E from Isahaya Electronics is a Bipolar Junction Transistor with Emitter Base Voltage -4 V, Emitter Cut off Current -1 µA, Collector Base Voltage -30 V, Collector Cut off Current -1 µA, Collector Emitter Breakdown Voltage -25 V. Tags: Through Hole, PNP Transistor. More details for ISB1035AS1E can be seen below.

Product Specifications

Product Details

  • Part Number
    ISB1035AS1E
  • Manufacturer
    Isahaya Electronics
  • Description
    -30 V, -1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -4 V
  • Emitter Cut off Current
    -1 µA
  • Collector Base Voltage
    -30 V
  • Collector Cut off Current
    -1 µA
  • Collector Emitter Breakdown Voltage
    -25 V
  • Collector Emitter Voltage
    -25 V
  • Continuous Collector Current
    -1 A
  • Pulse Collector Current
    -1.5 V
  • DC Current Gain
    150 to 300
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    600 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92S
  • Application
    Radio, Tape recorder, Small type stereo, Low frequency power amplify circuit

Technical Documents
View details on the manufacturer's website
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