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MJD112

Bipolar Junction Transistor by KEC Semiconductor (242 more products)
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The MJD112 from KEC Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 2 mA, Collector Base Voltage 100 V, Collector Cut off Current 20 µA, Collector Emitter Voltage 100 V. Tags: Surface Mount, NPN Transistor. More details for MJD112 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJD112
  • Manufacturer
    KEC Semiconductor
  • Description
    100 V, 2 A, NPN General Purpose Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    2 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    20 µA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    2 A
  • Pulse Collector Current
    4 A
  • DC Current Gain
    5000 to 12000
  • Gain Bandwidth Product
    25 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1 to 20 W
  • Output Capacitance
    100 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Application
    Home Appliance and Audio System

Technical Documents
View details on the manufacturer's website
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