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2N5671

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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The 2N5671 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 10 mA, Collector Base Voltage 120 V, Collector Cut off Current 15 mA. Tags: Through Hole, NPN Transistor. More details for 2N5671 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5671
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    120 V, 30 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    10 mA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    15 mA
  • Collector Emitter Voltage
    90 V
  • Continuous Collector Current
    30 A
  • DC Current Gain
    20 to 100
  • Gain Bandwidth Product
    40 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    140 W
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents
View details on the manufacturer's website
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