1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. Bipolar Junction Transistors
  5. MOSPEC SEMICONDUCTOR
  6. 2N6338

2N6338

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
Download Datasheet Request Quote

Note : Your request will be directed to MOSPEC SEMICONDUCTOR.

2N6338 Image

The 2N6338 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.8 to 2.5 V, Emitter Cut off Current 100 µA, Collector Base Voltage 120 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for 2N6338 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N6338
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    120 V, 25 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.8 to 2.5 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    25 A
  • Pulse Collector Current
    50 A
  • DC Current Gain
    12 to 120
  • Gain Bandwidth Product
    40 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    200 W
  • Output Capacitance
    300 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents
View details on the manufacturer's website
View similar products

Latest Bipolar Junction Transistors

View more products