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2N6676

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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2N6676 Image

The 2N6676 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 2 mA, Collector Base Voltage 450 V, Collector Cut off Current 1 mA. Tags: Through Hole, NPN Transistor. More details for 2N6676 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N6676
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    450 V, 15 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    2 mA
  • Collector Base Voltage
    450 V
  • Collector Cut off Current
    1 mA
  • Collector Emitter Voltage
    300 V
  • Continuous Collector Current
    15 A
  • Pulse Collector Current
    20 A
  • DC Current Gain
    8
  • Gain Bandwidth Product
    3 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    175 W
  • Output Capacitance
    500 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3
  • Application
    High Voltage, High Speed Power Switching Inductive Load Application

Technical Documents
View details on the manufacturer's website
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