2SC4102G-R-3T3R

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)

Note : Your request will be directed to MOSPEC SEMICONDUCTOR.

2SC4102G-R-3T3R Image

The 2SC4102G-R-3T3R from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 500 nA, Collector Base Voltage 120 V, Collector Cut off Current 500 nA, Collector Emitter Breakdown Voltage 120 V. Tags: Surface Mount, NPN Transistor. More details for 2SC4102G-R-3T3R can be seen below.

Product Specifications

Product Details

  • Part Number
    2SC4102G-R-3T3R
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    120 V, 0.05 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    500 nA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    500 nA
  • Collector Emitter Breakdown Voltage
    120 V
  • Collector Emitter Voltage
    120 V
  • Continuous Collector Current
    0.05 A
  • Gain Bandwidth Product
    140 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.2 W
  • Output Capacitance
    2.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Note
    Halogen Free

Technical Documents

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