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BD911

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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BD911 Image

The BD911 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 2.5 V, Emitter Cut off Current 1 mA, Collector Base Voltage 100 V, Collector Cut off Current 0.5 mA. Tags: Through Hole, NPN Transistor. More details for BD911 can be seen below.

Product Specifications

Product Details

  • Part Number
    BD911
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    100 V, 15 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    0.5 mA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    15 A
  • Pulse Collector Current
    20 A
  • DC Current Gain
    5 to 250
  • Gain Bandwidth Product
    3 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    90 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents
View details on the manufacturer's website
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