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BUV47B

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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The BUV47B from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.6 V, Emitter Cut off Current 1 mA, Collector Base Voltage 850 V, Collector Cut off Current 150 µA. Tags: Through Hole, NPN Transistor. More details for BUV47B can be seen below.

Product Specifications

Product Details

  • Part Number
    BUV47B
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    850 V, 9 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.6 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    850 V
  • Collector Cut off Current
    150 µA
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    9 A
  • Pulse Collector Current
    15 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    90 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247(3P)
  • Application
    High Voltage, High Speed Power Switching Inductive Load Application

Technical Documents
View details on the manufacturer's website
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