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LST5350G-T89

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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The LST5350G-T89 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage -1.2 to -1.1 V, Emitter Cut off Current -100 nA, Collector Base Voltage -50 V, Collector Cut off Current -50 µA. Tags: Surface Mount, PNP Transistor. More details for LST5350G-T89 can be seen below.

Product Specifications

Product Details

  • Part Number
    LST5350G-T89
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    -50 V, -3 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -1.2 to -1.1 V
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -50 V
  • Collector Cut off Current
    -50 µA
  • Collector Emitter Breakdown Voltage
    -50 V
  • Collector Emitter Voltage
    -50 V
  • Continuous Collector Current
    -3 A
  • Pulse Collector Current
    -5 A
  • DC Current Gain
    80 to 200
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.55 W
  • Output Capacitance
    35 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Note
    Halogen Free

Technical Documents
View details on the manufacturer's website
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