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MJ10004

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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The MJ10004 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 2.5 V, Emitter Cut off Current 175 mA, Collector Base Voltage 450 V, Collector Cut off Current 5 mA. Tags: Through Hole, NPN Transistor. More details for MJ10004 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJ10004
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    450 V, 20 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Emitter Cut off Current
    175 mA
  • Collector Base Voltage
    450 V
  • Collector Cut off Current
    5 mA
  • Collector Emitter Voltage
    350 V
  • Continuous Collector Current
    20 A
  • Pulse Collector Current
    30 A
  • DC Current Gain
    40 to 600
  • Industry
    Industrial, Commercial
  • Power Dissipation
    175 W
  • Output Capacitance
    100 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3
  • Application
    High Voltage, High Speed Power Switching Inductive Load Application

Technical Documents
View details on the manufacturer's website
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