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2N1617

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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2N1617 Image

The 2N1617 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 3 V, Emitter Cut off Current 10 mA, Collector Base Voltage 80 V, Collector Emitter Breakdown Voltage 80 V. Tags: Screw Mount, NPN Transistor. More details for 2N1617 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N1617
  • Manufacturer
    New Jersey Semiconductor
  • Description
    80 V, 5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    3 V
  • Emitter Cut off Current
    10 mA
  • Collector Base Voltage
    80 V
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    5 A
  • DC Current Gain
    15 to 75
  • Industry
    Industrial, Commercial
  • Power Dissipation
    60 W
  • RoHS Compliant
    Yes
  • Package Type
    Screw Mount
  • Package
    TO-61
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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