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2N1617A

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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2N1617A Image

The 2N1617A from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 10 V, Base Emitter Saturation Voltage 2 V, Emitter Cut off Current 0.050 mA, Collector Base Voltage 80 V, Collector Emitter Breakdown Voltage 80 V. Tags: Screw Mount, NPN Transistor. More details for 2N1617A can be seen below.

Product Specifications

Product Details

  • Part Number
    2N1617A
  • Manufacturer
    New Jersey Semiconductor
  • Description
    70 V, 7.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    10 V
  • Base Emitter Saturation Voltage
    2 V
  • Emitter Cut off Current
    0.050 mA
  • Collector Base Voltage
    80 V
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    70 V
  • Continuous Collector Current
    7.5 A
  • DC Current Gain
    20 to 60
  • Industry
    Industrial, Commercial
  • Power Dissipation
    85 W
  • RoHS Compliant
    Yes
  • Package Type
    Screw Mount
  • Package
    TO-61
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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