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2N1617B

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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The 2N1617B from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Collector Base Voltage 75 V, Collector Emitter Voltage 50 V, Continuous Collector Current 0.5 A, Gain Bandwidth Product 60 MHz. Tags: Through Hole, NPN Transistor. More details for 2N1617B can be seen below.

Product Specifications

Product Details

  • Part Number
    2N1617B
  • Manufacturer
    New Jersey Semiconductor
  • Description
    50 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Collector Base Voltage
    75 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    0.5 A
  • Gain Bandwidth Product
    60 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.8 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Application
    General Purpose
View details on the manufacturer's website
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