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2N1618

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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The 2N1618 from New Jersey Semiconductor is an NPN Silicon Power Transistor that is ideal for industrial and commercial applications. It has an emitter-base voltage of up to 10 V, a collector-emitter voltage of 100 V, and a collector-base voltage of le

Product Specifications

Product Details

  • Part Number
    2N1618
  • Manufacturer
    New Jersey Semiconductor
  • Description
    100 V High-Power NPN Silicon Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    10 V
  • Base Emitter Saturation Voltage
    3 V
  • Emitter Cut off Current
    1000 µA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    10 mA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    5 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    60 W
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Application
    General Purpose

Technical Documents
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