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2N1711

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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The 2N1711 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 5 nA, Collector Base Voltage 75 V, Collector Cut off Current 10 nA. Tags: Through Hole, NPN Transistor. More details for 2N1711 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N1711
  • Manufacturer
    New Jersey Semiconductor
  • Description
    50 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    5 nA
  • Collector Base Voltage
    75 V
  • Collector Cut off Current
    10 nA
  • Collector Emitter Breakdown Voltage
    75 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    20 to 300
  • Gain Bandwidth Product
    70 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    3 W
  • Output Capacitance
    25 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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