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2N1890

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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2N1890 Image

The 2N1890 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 0.9 to 1.3 V, Emitter Cut off Current 5 nA, Collector Base Voltage 100 V, Collector Cut off Current 10 nA. Tags: Through Hole, NPN Transistor. More details for 2N1890 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N1890
  • Manufacturer
    New Jersey Semiconductor
  • Description
    100 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    0.9 to 1.3 V
  • Emitter Cut off Current
    5 nA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    10 nA
  • Collector Emitter Breakdown Voltage
    100 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    80 to 270
  • Industry
    Industrial, Commercial
  • Power Dissipation
    3 W
  • Output Capacitance
    5 to 15 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-5
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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