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2N2727

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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2N2727 Image

The 2N2727 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 10 V, Base Emitter Saturation Voltage 3 V, Collector Base Voltage 200 V, Collector Emitter Breakdown Voltage 150 V, Collector Emitter Voltage 150 V. Tags: Through Hole, NPN Transistor. More details for 2N2727 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2727
  • Manufacturer
    New Jersey Semiconductor
  • Description
    150 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    10 V
  • Base Emitter Saturation Voltage
    3 V
  • Collector Base Voltage
    200 V
  • Collector Emitter Breakdown Voltage
    150 V
  • Collector Emitter Voltage
    150 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    75 to 150
  • Gain Bandwidth Product
    10 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-5
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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