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2N3035

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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2N3035 Image

The 2N3035 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 4 V, Emitter Cut off Current 1 µA, Collector Base Voltage 120 V, Collector Cut off Current 5 µA, Collector Emitter Breakdown Voltage 50 to 80 V. Tags: Through Hole, NPN Transistor. More details for 2N3035 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3035
  • Manufacturer
    New Jersey Semiconductor
  • Description
    80 V, 0.2 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    4 V
  • Emitter Cut off Current
    1 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    5 µA
  • Collector Emitter Breakdown Voltage
    50 to 80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    0.2 A
  • Pulse Collector Current
    10 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1 W
  • Output Capacitance
    6 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Application
    General Purpose, High Speed, High Current, Avalanche mode Switching application

Technical Documents
View details on the manufacturer's website
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