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2N3117

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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2N3117 Image

The 2N3117 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Emitter Cut off Current 10 nA, Collector Base Voltage 60 V, Collector Cut off Current 10 µA, Collector Emitter Breakdown Voltage 60 V. Tags: Through Hole, NPN Transistor. More details for 2N3117 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3117
  • Manufacturer
    New Jersey Semiconductor
  • Description
    60 V, 0.05 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Emitter Cut off Current
    10 nA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    0.05 A
  • DC Current Gain
    50 to 500
  • Gain Bandwidth Product
    60 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.36 W
  • Output Capacitance
    4.5 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-18
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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