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2N3261

Bipolar Junction Transistor by New Jersey Semiconductor (1072 more products)
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The 2N3261 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.8 to 1.1 V, Collector Base Voltage 40 V, Collector Cut off Current 6.5 to 25 µA, Collector Emitter Breakdown Voltage 15 V. Tags: Through Hole, NPN Transistor. More details for 2N3261 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3261
  • Manufacturer
    New Jersey Semiconductor
  • Description
    15 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.8 to 1.1 V
  • Collector Base Voltage
    40 V
  • Collector Cut off Current
    6.5 to 25 µA
  • Collector Emitter Breakdown Voltage
    15 V
  • Collector Emitter Voltage
    15 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    20 to 150
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.3 to 1 W
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-52
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website
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